New Technique to Grow Low Defect Single Crystalline Thin Films
Rutgers Researchers have developed a method to grow a large scale of high quality single crystalline In2Se3 thin film using a temporal seed of Bi2Se3. This technology can be used in fabricating high quality In2Se3-incorporated devices, such as low-defect-density Bi2Se3, an archetypical 3D topological insulator.
Inventor(s): Seongshik Oh, Matthew Brahlek, Nikesh Koirala, Maryam Salehi
Keywords(s): Electronics, Nanotechnology
Category(s): Technology Classifications > Physical Sciences & Engineering, Technology Classifications > Electronics/Semiconductor