Invention Summary:
In the photovoltaics industry it is pertinent to have high efficiency solar cells and polysilicon (poly-Si) junctions are at the forefront of the technology. Poly-Si junctions are doped polycrystalline silicon/ SiO2 junctions that incorporate passivated contacts that reduce the loss in efficiency compared to metal-silicon contacts.
Rutgers researchers have developed a new process to create high purity doped poly-Si junctions through a clever combination of Spin-On Dopant (SOD) and proximity doping. A source wafer coated with a spin-on-dopant is used to dope an amorphous silicon wafer creating a clean and hydrophobic poly-Si wafer. This procedure is a route to creating high purity, uniform, poly-Si layers without the use of toxic, flammable, and hazardous gases using maximum material for increased safety and reduced fabrication costs..
Market Applications:
- Solar cell architecture
- Semiconductors
Advantages:
- Non-toxic
- Economic throughput of materials
- Easily adoptable
- High deposition rates
- Scalable
Intellectual Property & Development Status: Provisional application filed. Patent pending. Available for licensing and/or search collaboration. For any business development and other collaborative partnerships contact: marketingbd@research.rutgers.edu
